85 Introduction to Solid MCQs

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Hello Friends !!! I am from quickstudyhelper.com. In today’s post, we are going to see 85 important ‘Introduction to Solid Engineering Physics MCQs’ which help you in your examination. If you are preparing for a competition exam, board exam, and engineering exam then you can read these MCQs.

RGPV Unit – 3 Introduction to Solid MCQs

Q1. _____can be used for the measurement of the strength of the magnetic field.

  1. Zener diode
  2. Hall effect
  3. K. P. Model
  4. Solar cell

Answer:- 2) Hall effect

Q2. A solar cell converts the optical energy into the

  1. mechanical energy
  2. chemical energy
  3. electrical energy
  4. optical energy

Answer:- 3) electrical energy

Q3. _____ is made by heavily doped P and N-type semiconductors.

  1. Zener diode
  2. Hall effect
  3. K P Model
  4. Solar cell

Answer:- 1) Zener diode

Q4. _____ has an empty conduction band and a filled valence band with a very narrow gap.

  1. Conductor
  2. Insulator
  3. Semiconductor
  4. All of these

Answer:- 3) Semiconductor

Q5. The solid having a bond gap 3eV exhibit negligible low electrical conductivity at all temperature is called

  1. Conductor
  2. Insulator
  3. Semiconductor
  4. All of these

Answer:- 2) Insulator

Q6. _____ is a solid in which the conduction band and valence band overlap and there is no energy gap between the two bands.

  1. Conductor
  2. Insulator
  3. Semiconductor
  4. All of these

Answer:- 1) Conductor

Q7. How many types of semiconductors?

  1. Three
  2. Four
  3. One
  4. Two

Answer:- 4) Two

Q8. N-type semiconductors are known as

  1. Acceptor
  2. Donar
  3. Both 1 & 2
  4. None

Answer:- 2) Donar

Q9. P-type semiconductors are known as

  1. Acceptor
  2. Donar
  3. Both 1 & 2
  4. None

Answer:- 1) Acceptor

Q10. The high occupied energy level is called

  1. Valence band
  2. Fermi level
  3. Conduction band
  4. Extrinsic semiconductor

Answer:- 2) Fermi level

Q11. How many types of biasing in the P-N junction diode

  1. Two
  2. Three
  3. Four
  4. Five

Answer:- 2) Three

Q12. To obtain p-type silicon semiconductor, we need to dope pure silicon with

  1. aluminium
  2. phosphorus
  3. oxygen
  4. germanium

Answer:- 1) aluminium

Q13. On applying a reverse bias to a junction diode, it

  1. lowers the potential barrier
  2. raise the potential barrier
  3. increases the majority carrier current
  4. increases the minority carrier current

Answer:- 2) raise the potential barrier

Q14. What happens during the regulation action of a Zener diode?

  1. the current through the series resistance changes
  2. the resistance offered by the Zener changes
  3. the Zener resistance is constant
  4. both 1 & 2

Answer:- 4) both 1 & 2

Q15. Solar cells is also called

  1. Photovoltaic cell
  2. Electrical cell
  3. Chemical cell
  4. None of these

Answer:- 1) Photovoltaic cell

Q16. Hall effect can be used to measure _____ field.

  1. electrical field
  2. magnetic field
  3. chemical field
  4. physical field

Answer:- 2) magnetic field

Q17. Hall coefficient formula is

  1. ne
  2. 1/ne
  3. -ne
  4. -1/ne

Answer:- 4) -1/ne

Q18. A semiconductor has generally _____ valence electrons.

  1. two
  2. five
  3. one
  4. four

Answer:- 4) four

Q19. When a pentavalent impurity is added to a pure semiconductor, it becomes

  1. an insulator
  2. an intrinsic semiconductor
  3. p-type semiconductor
  4. n-type semiconductor

Answer:- 4) n-type semiconductor

Q20. Addition of pentavalent impurity to a semiconductor creates many

  1. free electrons
  2. holes
  3. valence electrons
  4. bound electrons

Answer:- 1) free electrons

Q21. Addition of trivalent impurity to a semiconductor creates many

  1. free electrons
  2. holes
  3. valence electrons
  4. bound electrons

Answer:- 2) holes

Q22. In the depletion region of a P-N junction, there is a shortage of

  1. acceptor ions
  2. holes and electrons
  3. donor ions
  4. none of the above

Answer:- 2) holes and electrons

Q23. With forwarding bias to a P-N junction, the width of the depletion layer

  1. decreases
  2. increases
  3. remains the same
  4. none of the above

Answer:- 1) decreases

Q24. Who discovered the Hall effect?

  1. Heinrich Hertz
  2. Edward Jenner
  3. Thomas Young
  4. Physicist Edwin Hall

Answer:- 4) Physicist Edwin Hall

Q25. When a forward bias is applied to a
crystal diode, it

  1. raises the potential barrier
  2. lowers the potential barrier
  3. reduces the majority carrier current
  4. none of these

Answer:- 2) lowers the potential barrier

Q26. Avalanche breakdown in a crystal diode occurs when

  1. the potential barrier is reduced to a zero
  2. forward current exceeds a certain value
  3. reverse bias exceeds a certain value
  4. all of these

Answer:- 3) reverse bias exceeds a certain value

Q27. A Semiconductor is electrically neutral because it has

  1. majority Carries
  2. no majority carriers
  3. equal no of positive & negative carries
  4. no free carrier

Answer:- 4) no free carrier

Q28. When the temperature of an intrinsic semiconductor is increased

  1. resistance of semiconductor is also increased
  2. conductivity is decreased
  3. energy of atoms is increased
  4. holes are created

Answer:- 3) energy of atoms is increased

Q29. The conduction band of a semiconductor material may be

  1. completely filled
  2. partially filled
  3. empty
  4. either 2 & 3

Answer:- 3) empty

Q30. In an intrinsic semiconductors, the fermi level lies

  1. in the middle of conduction band & valence band
  2. near CB
  3. near VB
  4. none of these

Answer:- 1) in the middle of the conduction band & valence band

Q31. Which of the following atoms can be used as a p-type impurity.

  1. Boron
  2. Arsenic
  3. Antimony
  4. Phosphorus

Answer:-1) Boron

Q32. The energy bond which possesses the free electron is called

  1. Valance band
  2. Conduction band
  3. Forbidden band
  4. None of these

Answer:- 2) Conduction band

Q33. Which of the following behaves as insulate?

  1. Diamond
  2. Germanium
  3. Silicon
  4. Silver

Answer:- 1) Diamond

Q34. In a semiconductor

  1. there are no free electrons at 0 k
  2. no free elenchus at any temperature
  3. the number of free electrons increases with pressure
  4. the number of free electrons to more than that in a Conductor

Answer:- 1) there are no free electrons at 0 k

Q35. Electric conduction in a Semiconductor takes place due to

  1. Elections only
  2. Holes only
  3. Both electrons & holes
  4. Neither electrons nor holes

Answer:- 1) Both electrons & holes

Q36. What is the resistivity of a pure semiconductor at absolute zero?

  1. Infinity
  2. Same as that of Conductors at room temperature
  3. Same as that of insulators at non temperature.
  4. Zero

Answer:- 1) Infinity

Q37. The mobility of free elections is greater than that of free holes because

  1. they are light
  2. they carry negative change
  3. they mutually collide loss
  4. they require low energy to continue their motion

Answer:- 1) they are light

Q38. The relation b/w number of free electrons in a Semiconductor and temperature given by

  1. n directly proportional T
  2. n directly proportional T½
  3. n directly proportional T³
  4. n directly proportional T³/²

Answer:- 1) n directly proportional T

Q39. One serious drawback of semi-conductor devices is

  1. they do not cast for long time
  2. they are costly
  3. they can not be used with high voltage
  4. they pollute the environment

Answer:- 3) they can not be used with high voltage

Q40. The Drift Current in a p-n Junction forms the

  1. n-side to the p-side
  2. p-side to the n-side
  3. n-side to the p-side of the Junction is forward biased and in the opposite direction if it is reversed
  4. p-side to n-side if the junction is forward biased and in the opposite direction if is reverse biased

Answer:- 1) n-side to the p-side

Q41. Diffusion Current in a P-N Junction is greater than drift current in magnitude.

  1. If the junction is forward biased
  2. If the junction is reversed biased
  3. If the Junction is unbiased
  4. In no Case

Answer:- 2) If the junction is reversed biased

Q42. Zener Diode is used for

  1. amplification
  2. rectification
  3. stabilisation
  4. all of the above

Answer:- 4) all of the above

Also Read –

Q43. The depletion region of P-N Junction is one that is depleted of

  1. tom
  2. mobile charges
  3. no mobile charges
  4. velocity of the carries

Answer:- 3) no mobile charges

Q44. A Silicon P-N Junction in forwarding conduction has a voltage drop closer to

  1. 0.7 v
  2. 1.7 v
  3. 2.1 v
  4. 1.2 v

Answer:- 1) 0.7 v

Q45. The Leakage current of a P-N Junction is caused by

  1. Heat energy
  2. Chemical energy
  3. Barrier potential
  4. Majority Carriers

Answer:- 1) Heat energy

Q46. The resistivity of semiconductors depends on

  1. Shape of the semiconductor
  2. Atomic nature of semiconductor
  3. Width of Semiconductor
  4. Length of Semiconductor

Answer:- 2) Atomic nature of semiconductor

Q47. In diode reverse current is due to

  1. Mobile donor ions
  2. Mobile acceptor ions
  3. Minority carriers
  4. Majority carriers

Answer:- 3) Minority carriers

Q48. Doping of Zener diode is

  1. Heavy doping
  2. Low Doping
  3. No doping
  4. Both 1 & 2

Answer:- 1) Heavy doping

Q49. In Zener, diode current is controlled by

  1. Zenes voltage
  2. External load resistance
  3. Zener resistance
  4. By reverse voltage

Answer:- 2) External load resistance

Q59. In Zener diode, Zones Breakdown takes place

  1. Above 6v
  2. Below 6v
  3. Above 8v
  4. Below 8v

Answer:- 2) Below 6v

Q60. A Zener diode when used in voltage regulation is biased in

  1. Reverse breakdown region
  2. Forward bias region
  3. Forward bias constant current mode
  4. Reverse bias region below the Breakdown voltage

Answer:- 1) Reverse breakdown region

Q61. The Breakdown voltage of the Zener diode is controlled by

  1. Doping level
  2. Current
  3. Voltage
  4. Both 1 & 2

Answer:- 1) Doping level

Q62. Zener diode maximum current is obtained when loading resistance

  1. Infinite
  2. Becomes zero
  3. High
  4. Low

Answer:- 4) Low

Q63. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a

  1. Peak
  2. Barrier
  3. Threshold
  4. Path

Answer:- 2) Barrier

Q64. The reverse current in a diode is of the order of

  1. KA
  2. MA
  3. μA
  4. A

Answer:- 3) μA

Q65. A crystal diode is used as

  1. An Amplifier
  2. A rectifier
  3. An Oscillater
  4. A voltage regulator

Answer:- 2) A rectifier

Q67. The temperature of a crystal diode increases then the leakage current

  1. Remains the Same
  2. Becomes zero
  3. Decreases
  4. Increases

Answer:- 4) Increases

Q68. If the doping level of a crystal diode is increased, the breakdown voltage

  1. Remains the same
  2. Is Increased
  3. Is decreased
  4. None of these

Answer:- 3) Is decreased

Q68. The doping level in a Zener diode is that of a crystal diode

  1. Less than
  2. More than
  3. Same
  4. None of the above

Answer:- 2) More than

Q69. A Zener diode is used as

  1. As amplifier
  2. A voltage regulator
  3. A rectifier
  4. A multivibrator

Answer:- 2) A voltage regulator

Q70. In the breakdown region a Zener diode behaves like a source

  1. Constant voltage
  2. Constant current
  3. Constant resistance
  4. None of the above

Answer:- 1) Constant voltage

Q71. A Zener diode is destroyed if it

  1. forward biased
  2. reverse biased
  3. carrier more than rated current
  4. none of these

Answer:- 3) carrier more than rated current

Q72. Series resistance is connected in the Zener circuit to

  1. properly reverse bias the zener
  2. protect the Zener
  3. properly forward bias the zener
  4. none of these

Answer:- 2) Protect the Zener

Q73. A Zener diode has a breakdown voltage

  1. Undefined
  2. Sharp
  3. Zero
  4. Defined

Answer:- 2) Sharp

Q74. A Zener diode is a device

  1. A nonlinear
  2. A linear
  3. An amplifying
  4. None of these

Answer:- 1) A nonlinear

Q75. Solar cells are used as a source of power in the earth satellite because they have

  1. Very high efficiency
  2. Unlimited life
  3. Higher Power capacity per weight
  4. Both 2 & 3

Answer:- 4) Both 2 & 3

Q76. Which of the following, has the lowest temperature coefficient of resistivity?

  1. Copper
  2. Silver
  3. Gold
  4. Aluminum

Answer:- 3) Gold

Q77. In a metal,

  1. The electrical conduction is by electrons and holes
  2. With rising in temperature, the conductivity decreases
  3. The conduction band is empty
  4. There is a small energy gap between the two bnds

Answer:- 2) With rising in temperature, the conductivity decreases

Q78. The forbidden energy gap in semiconductors:

  1. Lies just below the valence band
  2. Is the same as the valence band
  3. Lies just above the conduction band
  4. Lies between the valence band and the conduction band

Answer:- 4) Lies between the valence band and the conduction band

Q79. The unit of mobility of charge carriers is

  1. m²/volt-sec
  2. m/volt-sec²
  3. m³/volt-sec
  4. m/volt-sec

Answer:- 1) m²/volt-sec

Q80. A semiconductor is electrically neutral because it has

  1. large number of holes
  2. a few hole and same number of electrons
  3. acts as an insulator
  4. acts as metallic character

Answer:- 3) Acts as an insulator

Q81. Which of the following atoms can be used as a p-type impurity

  1. Boron
  2. Arsenic
  3. Antimony
  4. Phosphorus

Answer:- 1) Boron

Q82. Due to illumination of light, the electron and hole concentration in a heavily doped n-type semiconductor, increase by ∆n and ∆p respectively. If ni is the intrinsic concentration, then

  1. ∆n<∆p
  2. ∆n>∆p
  3. ∆n=∆p
  4. ∆n×∆p=n²

Answer:- 4) ∆n×∆p=n²

Q83. Which of the following can be used in series with a Zener diode so that combination has almost zero temperature coefficient?

  1. Diode
  2. Resistor
  3. Transistor
  4. MOSFET

Answer:- 1) Diode

Q84. Zener diodes are also known as

  1. Voltage regulators
  2. Forward bias diode
  3. Breakdown diode
  4. None of the them

Answer:- 3) Breakdown diode

Q85. The ratio of reverse resistance and forward resistance of a germanium crystal diode is about

  1. 1 : 1
  2. 100 : 1
  3. 1000 : 1
  4. 40,000 : 1

Answer:- 4) 40,000 : 1

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